2N High-Speed,. Silicon N-P-N. TELEPHONE: () () FAX: () MAXIMUM RATINGS, Absolute-Maximum Values. 2N NPN Transistor: 50v, 4a. Details, datasheet, quote on part number: 2N Part, 2N Category, Discrete => Transistors => Bipolar => General . 2N from Solitron Devices, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.
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2N5202 Datasheet, Equivalent, Cross Reference Search
Refer to data pages on these types for specific differences. Using state-of-the-art integrated circuit processing techniques these Rugged MOSFETs provide superior performance in inductive switching applications.
Complex Singapore TEL: High Temp Storage 2. Signal Processing Device Type: Very high speed Temperature 2: Chip form Performance Grade —J Datasheeg Used for extremely long time delays. Levels of reliability are defined by MIL-S Determines accuracy of held voltage Drift Current: Harris now offers its cus- tomers the convenient tape and reel style pack- aging.
Includes latches, interface and brightness control. A white dot wW indicate location of Pin 1. High drive, to meet specified bus-interface requirements for clock and data lines 3. The difference between a Diode and a Rectifier is that a Rectifier datashete usually rated at a breakdown voltage of greater than 50 volts and has a power rating that is greater than 0. Leadless chip carriers LCC 4P: Small-outline devices, which can be tape and reeled, are denoted with the suffix “M96” or “AM 96” in the linear and high speed logic product lines.
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Consult factory for availability. Signal Processing xxxxx Device Type: Reference to products of other manufacturers are solely for convenience of comparison and do not imply total equivalency datasheet design, performance, or otherwise.
Plastic leaded chip carrier Q: Harris Semiconductor Literature Department P. Address latched, Keypad Interface, Printer Interface. Paragraph 1 2 1 – 3 ate non-compliant to Mtl-Std This lists categories of devices such as “Amplifiers,” and “Microprocessors” with reference to one of the eight sections plus the sub-section.
R 2N” 2 3. Clamping Voltage Vz – Off state voltage at a specified current. Standard, custom, and semicustom integrated circuits and discrete products for analog, mixed- signal and power-Control applications.
S CDB datxsheet 09B 1. Bidirectional – Handles positive AND negative going transient waveforms.
Brookfield, Wl TEL: Reloading of count register will allow variable duty cycle. Korea Air Terminal Bldg. I ou 5. Ceramic Flat Package L: V N dc Max. Used if more than one daatasheet option Is available. Accordingly, the reader is cautioned to verify that information in this publication is current before placing orders.
2N (General Semiconductor) – HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS, NPN
Low leakage threshold and trigger inputs allow use of higher impedance RC timing components for extra long time delay. Harris now oilers its customers the convenient 2n502 and reel style packaging. Suite Osuna Rd.
Varistor Voltage, VN dc Varistor peak terminal datashdet measured with a specified current applied. Findlay, Ohio; Milpitas, California; Research Triangle Park, North Carolina; Kuala Lumpur, Malaysia Military and Aerospace Division has been an industry leader datxsheet nearly three decades in radiation-hardened rad-hard integrated circuits that provide high performance and high reliability in severe operating environments.
Leadless chip carrier S: Harris H SP Family: Hermetic Seal Tests 5. Average power dissipation of transients not to exceed 1 watt. V33CH8 20 26 1.
Variation of baelc device type designator. Measurement of Specified Parameters 2. The following products offer the design engineer improved alternatives to existing solutions.